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| TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Notebook PC Applications Portable Equipment Applications * * * * * * * Small footprint due to small and thin package High speed switching Small gate charge: Qg = 18 nC (typ.) Low drain-source ON resistance: RDS (ON) = 12 m (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 20 11 44 1.9 Unit V V V A JEDEC JEITA TOSHIBA 2-6J1B Drain power dissipation W Weight: 0.080 g (typ.) 1.0 W Circuit Configuration 157 11 0.19 150 -55 to 150 mJ A mJ C C 1 2 3 4 8 7 6 5 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-03-12 TPC8010-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 C/W Marking (Note 5) TPC8010 H TYPE Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 11 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * on lower left of the marking indicates Pin 1. shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-03-12 TPC8010-H Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 24 V, VGS = 10 V, ID = 11 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 10 V VGS 0V 4.7 ID = 5.5 A VOUT RL = 2.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 5.5 A VGS = 10 V, ID = 5.5 A VDS = 10 V, ID = 5.5 A Min 30 15 1.1 5.5 Typ. 16 12 11 1020 120 400 3.1 11 3.4 23 18 10 2.6 4.4 5.5 Max 10 10 2.3 25 16 ns nC pF Unit A A V V m S Duty < 1%, tw = 10 s = VDD 15 V - VDD 24 V, VGS = 10 V, ID = 11 A - VDD 24 V, VGS = 5 V, ID = 11 A - Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 11 A, VGS = 0 V Min Typ. Max 44 -1.2 Unit A V 3 2002-03-12 TPC8010-H ID - VDS 10 10 5 8 3 2.8 2.5 6 2.4 2.7 2.6 Common source Ta = 25C Pulse test 20 10 16 4 5 3 ID - VDS Common source Ta = 25C Pulse test 2.8 2.7 12 2.6 2.5 8 2.4 2.3 4 VGS = 2 V VGS = 2.1 V 0 0 (A) ID Drain current 4 2.3 2.2 2 0 0 Drain current ID (A) 4 2 4 6 8 10 4 8 12 16 20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 40 Common source VDS = 10 V Pulse test 1 VDS - VGS Common source Ta = 25C Pulse test (V) Drain-source voltage VDS 0.8 ID (A) 30 0.6 Drain current 20 0.4 10 100 0 0 25 Ta = -55C 5.5 0.2 2.5 ID = 11 A 1 2 3 4 5 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 RDS (ON) - ID Common source VDS = 10 V Pulse test 100 Common source Ta = 25C |Yfs| (S) Drain-source on resistance RDS (ON) (m) 30 30 VGS = 4.5 V 10 10 Pulse test Forward transfer admittance 10 Ta = -55C 3 100 25 1 3 0.3 0.1 1 10 100 1 0.1 0.3 1 3 10 30 Drain current ID (A) Drain current ID (A) 4 2002-03-12 TPC8010-H RDS (ON) - Ta 25 ID = 11, 5.5, 2.5 A 100 10 IDR - VDS 5 3 10 1 VGS = 0 V Drain-source on resistance RDS (ON) (m) 20 ID = 11, 5.5, 2.5 A 10 10 Drain reverse current 15 VGS = 4.5 V IDR (A) 1 5 Common source Pulse test 0 -80 -40 0 40 80 120 160 Common source Ta = 25C Pulse test 0.1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 2.5 Vth - Ta Gate threshold voltage Vth (V) 100 2 (pF) 1000 500 300 Ciss C 1.5 Capacitance Coss 100 50 30 Crss Common source VGS = 0 V f = 1 MHz Ta = 25C 0.3 0.5 1 3 5 10 30 50 1 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test 0 -80 -40 10 0.1 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2 (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s 40 Dynamic Input/Output Characteristics Common source ID = 11 A Ta = 25C Pulse test VDD = 24 V 6 20 VDS 12 10 6 VGS 4 VDD = 24 V 8 12 16 (W) (V) 1.6 PD Drain-source voltage VDS Drain power dissipation (2) 0.8 0.4 0 0 50 100 150 200 0 0 1 10 15 0 20 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2002-03-12 Gate-source voltage 1.2 VGS 30 12 (V) TPC8010-H rth - tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) 300 (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s 100 (2) rth (C/W) (1) Transient thermal impedance 30 10 3 1 Single pulse 0.3 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 100 ID max (pulse)* 1 ms* 10 Drain current ID (A) 10 ms* 1 0.1 *: Single pulse Ta = 25C 0.01 0.01 Curves must be derated linearly with increase in temperature. 0.1 1 VDSS max 10 100 Drain-source voltage VDS (V) 6 2002-03-12 |
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